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Low-dimensional materials hold great promises for exploring emergent physical phenomena, nanoelectronics, and quantum technologies. Their synthesis often depends on catalytic metal films, from which the synthesized materials must be transferred to insulating substrates to enable device functionality and minimize interfacial interactions during quantum investigations. Conventional transfer methods, such as chemical etching or electrochemical delamination, degrade material quality, limit scalability, or prove incompatible with complex device architectures. Here, a scalable, etch-free transfer technique is presented, employing Field's metal (51% In, 32.5% Bi, and 16.5% Sn by weight) as a low-melting-point mechanical support to gently delaminate low-dimensional materials from metal films without causing damage. Anchoring the metal film during separation prevents tearing and preserves material integrity. As a proof of concept, atomically precise graphene nanoribbons (GNRs) are transferred from Au(111)/mica to dielectric substrates, including silicon dioxide (SiO_2) and single-crystalline lanthanum oxychloride (LaOCl). Comprehensive characterization confirms the preservation of structural and chemical integrity throughout the transfer process. Wafer-scale compatibility and device integration are demonstrated by fabricating GNR-based field-effect transistors (GNRFETs) that exhibit room-temperature switching with on/off current ratios exceeding 10^3. This method provides a scalable and versatile platform for integrating low-dimensional materials into advanced low-dimensional materials-based technologies. 

The requirement for C₂H₂concentrations below 2 parts per million (ppm) in gas streams for C₂H₄polymerization necessitates its semihydrogenation to C₂H₄. We demonstrate selective chemical looping combustion of C₂H₂in C₂H₄-rich streams by Bi₂O₃as an alternative catalytic pathway to reduce C₂H₂concentration below 2 ppm. Bi₂O₃combusts C₂H₂with a first-order rate constant that is 3000 times greater than the rate constant for C₂H₄combustion. In successive redox cycles, the lattice O of Bi₂O₃can be fully replenished without discernible changes in local Bi coordination or C₂H₂combustion selectivity. Heterolytic activation of C–H bonds across Bi–O sites and the higher acidity of C₂H₂results in lower barriers for C₂H₂activation than C₂H₄, enabling selective catalytic hydrocarbon combustion leveraging differences in molecular deprotonation energies. 

Abstract A single‐crystal specimen of rutile (titania) was flashed repetitively, while increasing the electric field after each cycle. As expected, the flash onset temperature continued to drop modestly at higher fields. However, when the field was increased from 400 to 450 V cm^–1, the flashed onset fell dramatically down to room temperature. We have investigated the electrical and optical properties of this room temperature flashed specimen (called SZ). The specimen was electronically conducting. Optical absorption spectroscopy revealed a narrow band of new energy levels that were generated just below the conduction band. The gap between the conduction band and this flash‐induced energy level agreed with the peak in the electroluminescence spectrum. Optical second harmonic generation (SHG) is reported. The flash‐on condition significantly lowered the SHG, which rebounded when the flash was turned off. This result suggests that the structure becomes more centrosymmetric in the state of flash, which may represent a disordered state of defects. The possibility of studying flash behavior at room temperature, without a furnace (as in SZ type specimens), opens a considerable simplification for in‐situ characterization of flash behavior. For example, a possible relationship between memristor physics and the flash phenomenon can be studied. 

In situ X-ray diffraction measurements at the Advanced Photon Source show that alpha-Al2O3 and MgAl2O4 react nearly instantaneously and completely, and nearly completely to form single-phase high-alumina spinel during voltage-to-current type of flash sintering experiments. The initial sample was constituted from powders of alpha-Al2O3, MgAl2O4 spinel, and cubic 8 mol% Y2O3-stabilized ZrO2 (8YSZ) mixed in equal volume fractions, the spinel to alumina molar ratio being 1:1.5. Specimen temperature was measured by thermal expansion of the platinum standard. These measurements correlated well with a black-body radiation model, using appropriate values for the emissivity of the constituents. Temperatures of 1600-1736 degrees C were reached during the flash, which promoted the formation of alumina-rich spinel. In a second set of experiments, the flash was induced in a current-rate method where the current flowing through the specimen is controlled and increased at a constant rate. In these experiments, we observed the formation of two different compositions of spinel, MgO center dot 3Al(2)O(3) and MgO center dot 1.5Al(2)O(3), which evolved into a single composition of MgO center dot 2.5Al(2)O(3) as the current continued to increase. In summary, flash sintering is an expedient way to create single-phase, alumina-rich spinel.